New Frequency Tailored ICP® Piezoelectric Pressure Sensors |
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Each sensor is 100% in-process tested for resonant frequency, rise time, and acceleration compensation, and are supplied with NIST traceable, A2LA accredited calibration to ISO17025. Optional gas driven shock-tube response curves can be provided upon request. The sensors are ideal for measuring blast over-pressure and explosion pressure in free-field or closed arenas to obtain peak pressure, total impulse, shock wave and time-of-arrival measurements often used to study blast effects on structures, vehicles, and other surrounding objects. Frequency tailoring allows the sensors to capture both peak pressure and total impulse calculations. Other applications include pulsations, closed bomb combustion, airbag testing, pneumatic, hydraulic, fluid, and other such dynamic pressures. ICP® technology features integral microelectronics that provides a high signal-to-noise ratio compared to resistive silicon semiconductor sensing technologies, which require external amplification. The high-level 5-volt output signal is capable of driving long cable runs, hundreds of feet in length, to a safe zone for data acquisition. Solid-state construction, hermetically-sealed housings, and laser-welded flush diaphragms provide undistorted high frequency response and durability, even in adverse environmental conditions. PCB® Series 113B and 102B pressure sensors are available with dynamic ranges to 15 kpsi (103 MPa) and sensitivities to 100 mV/psi (14.5 mV/kPa). Stock models and alternate mountings are available. |
PCB Aerospace & Defense – a division of PCB Piezotronics, Inc., announces a new frequency tailored ICP® and charge output piezoelectric pressure sensors, Series 113B and 102B. The new quartz dynamic pressure sensors have an extremely fast 1 micro-second response time, with resonant frequencies above 500 kHz. Frequency tailoring, a combination of mass balancing and microelectronics, provides a fast response to shock waves without the high ringing amplitudes experienced with general purpose piezoelectric sensors or resistive silicon semiconductor sensing technologies.